| ‘lllvVISHAYQV www.viShay.com 0 0 2 0.4 0.6 0.5 I 0Pulse Length (S) Reverse Current (DA)75 I00 I25 I50Reverse Voliage (V) 8 25 50 75 I00 I25 I50 Junction Temperaiure ("C)Fig. 3 - Reverse Current vs. Junction Temperature 120 3 om o J> 0 Reverse Power Dissipation (mw) N (7) o o Junciion Temperaiure (°C)Fig. 4 - Max. Reverse Power Dissipation vs. Junction Temperature 25Document Number: 88961 N oG 8 Diode Capacitance (pF) m Fig. 5 - Diode Capacitance vs. Reverse Voltage Revision: 21 -Aug-1 3 BYG21 K-E3/ H E3, BYG21 M-E3/ H E3Vishay General Semiconductor 3 200 I50 I00 50 Reverse Recovery Charge (nc) |R:0.5 A. |R:0.I25 A FonNard Current (A)Fig. 6 - Max. Reverse Recovery Charge vs. Fom/ard Current Thermal Resistance for Pulse Cong, (K/W Fig. 7 - Thermal Response For technical questions within your region: DiogesArnericas@vishay.corn, DiogesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT To SPECIFIC DISCLAIMERS, SET FORTH AT www.vish md C7910 |